Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm2 Short-Circuit Current
Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm2 Short-Circuit Current
复制标题
DOI：
10.1109/jphotov.2017.2775139
复制
发表时间：
2018-01-01
影响因子：
3
通讯作者：
Sampath, Walajabad
中科院分区：
文献类型：
--
作者：
Munshi, Amit H.;Kephart, Jason;Sampath, Walajabad
将800 nm的CdSeTe层添加到用于高效CdTe电池的CdTe吸收剂中以增加电流并产生效率的增加。所采用的CdSeTe层具有接近1.41 eV的带隙，而CdTe的带隙为1.5 eV。这种较低的带隙使得电流密度从约26 mA/cm 2增加到超过28 mA/cm 2。在高效率的仅含CdTe的器件中获得的开路电压得以保持，并且填充因子保持接近80%。提高短路电流密度，保持开路电压，器件效率超过19%。外量子效率意味着大约一半的电流在CdSeTe层中产生，一半在CdTe中产生。横截面STEM和EDS显示出整个良好的晶粒结构。观察到Se扩散到CdTe层中。这是由大学或国家实验室证明的最高效率的多晶CdTe光伏器件。
An 800 nm CdSeTe layer was added to the CdTe absorber used in high-efficiency CdTe cells to increase the current and produce an increase in efficiency. The CdSeTe layer employed had a band-gap near 1.41 eV, compared with 1.5 eV for CdTe. This lower band-gap enabled a current density increase from approximately 26 to over 28 mA/cm(2). The open-circuit voltage obtained in the high-efficiency CdTe-only device was maintained and the fill-factor remained close to 80%. Improving the short-circuit current density and maintaining the open-circuit voltage lead to device efficiency over 19%. External quantum efficiency implied that about half the current was generated in the CdSeTe layer and half in the CdTe. Cross-sectional STEM and EDS showed good grain structure throughout. Diffusion of Se into the CdTe layer was observed. This is the highest efficiency polycrystalline CdTe photovoltaic device demonstrated by a university or national laboratory.