GaxIn1−xAs quantum wire heterostructures formed by strain‐induced lateral‐layer ordering
GaxIn1−xAs quantum wire heterostructures formed by strain‐induced lateral‐layer ordering
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由应变诱导横向层有序形成的 GaxIn1−xAs 量子线异质结构
DOI：
10.1063/1.360507
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发表时间：
1995
影响因子：
3.2
通讯作者：
K. Hsieh
中科院分区：
文献类型：
--
作者：
S. Chou;K. Cheng;L. Chou;K. Hsieh
采用单步分子束外延技术在(10 0)轴向InP衬底上生长了GaxIn1−xAs量子线阵列。利用应变诱导横向层有序化(SILO)过程在(GaAs)2/(InAs)2.2短周期超晶格(SPS)层中原位形成QWR。对横截面和平面图的电子显微镜图像、光致发光峰值能量和偏振各向异性的分析证实了这些异质结构的量子阱性质。筒仓过程发生在约500 °C的宽生长温度范围内，但是，高温度和低温度都会导致较弱的横向成分调制。横向成分调制的强度与SPS量子势垒层的总厚度成正比，与单个量子阱的厚度无关。换句话说，成分调制的幅度随着增长的进行而积累。应变驱动的块体固态扩散模型已被证明是...
GaxIn1−xAs quantum wire (QWR) arrays were grown on (100) on‐axis InP substrates by single‐step molecular‐beam epitaxy. The QWRs were formed in situ in (GaAs)2/(InAs)2.2 short‐period‐superlattice (SPS) layers by the strain‐induced lateral‐layer ordering (SILO) process. An analysis of the cross‐sectional and plan‐view transmission electron microscopy images, photoluminescence peak energies, and polarization anisotropy has confirmed the QWR nature of these heterostructures. The SILO process occurs over a wide growth temperature range near 500 °C. However, both high and low growth temperatures result in a weaker lateral composition modulation. The strength of the lateral composition modulation is proportional to the total thickness of the SPS quantum‐well layers, regardless of the thickness of the individual quantum well. In other words, the magnitude of composition modulation accumulates when growth proceeds. A strain‐driven bulk solid‐state diffusion model has been proven to be part of the driving force of ...
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H