X-ray and ? -ray spectroscopy using a 2 × 2 GaAs p + -i-n + diode array
X-ray and ? -ray spectroscopy using a 2 × 2 GaAs p + -i-n + diode array
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X 射线和？
DOI：
10.1016/j.nima.2020.164672
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Lioliou G
中科院分区：
文献类型：
--
作者：
Lioliou G
用金属有机气相外延生长的材料制作了2×2像素的单片X射线探测器阵列。每个像素是一个200μm×200μm正方形台面p+-In+光电二极管，具有10μm厚的I层。对该阵列进行电学表征，然后将每个像素依次连接到定制的低噪声电荷灵敏前置放大器的输入。在20℃下积累了55Fe X射线、109Cd X射线和γX射线以及241Am X射线和γ能谱，然后研究了其中一个像素在≤100℃下的光谱响应。在前置放大器和探测器阵列都工作在100°C的情况下，能量分辨率(半高全宽)在5.9keV时为1.61keV±0.04keV，在22.16keV时为1.63keV±0.06keV，在59.54keV时为1.65keV±0.08keV。结果表明，像素没有受到不完整的电荷收集的影响。在这么高的温度下，所达到的能量分辨率是迄今为止报道过的最好的砷化镓光谱仪。
A GaAs 2× 2 pixel monolithic X-ray detector array was fabricated from material grown by metalorganic vapour phase epitaxy. Each pixel was a 200 μ m× 200 μ m square mesa p+-in+ photodiode with a 10 μ m thick i layer. The array was electrically characterized and then each pixel was connected to the input of a custom-made, low noise, charge-sensitive preamplifier in turn. 55 Fe X-ray, 109 Cd X-ray and γ-ray, and 241 Am X-ray and γ-ray spectra were accumulated at 20° C. Following this, the spectroscopic response of one of the pixels was investigated at temperatures≤ 100° C. With both the preamplifier and detector array operated at 100° C, the energy resolution (Full Width at Half Maximum) was 1.61 keV±0.04 keV at 5.9 keV, 1.63 keV±0.06 keV at 22.16 keV, and 1.65 keV±0.08 keV at 59.54 keV. The results suggested that the pixels did not suffer from incomplete charge collection. The energy resolution achieved is the best reported so far for GaAs spectrometers at such high temperatures.