Flux flow microelectronics
Flux flow microelectronics
复制标题
磁通流微电子学
DOI：
10.1109/77.233545
复制
发表时间：
1993
影响因子：
1.8
通讯作者：
S.Y. Kou
中科院分区：
文献类型：
--
作者：
J. Martens;V. Hietala;T. A. Plut;D. Ginley;G. A. Vawter;C. Tigges;M. Siegal;J. Phillips;S.Y. Kou
基于磁通流的器件，如超导磁通流晶体管和磁控长结，已经由TlCaBaCuO和YBaCuO薄膜制成。这些装置是基于磁通流在其各自结构中的磁控制：一个长结或一组弱链接。这两个器件的等效电路是相似的：低阻抗输入控制线，输出阻抗为3-20 ω，有源电流控制元件。较长的连接点往往较慢，具有较低的增益，并且在某种程度上比它们的同类更少噪声。窄带和分布式放大器（50 GHz带宽，噪声系数<3 dB）、移相器（连续损耗<2 dB, 4-40 GHz）、逻辑门（2-3-ps门延迟）等电路。和使用这些器件制造的存储器在性能方面进行了比较和分析
Flux-flow-based devices such as the superconducting flux flow transistor and magnetically controlled long junctions have been made from thin films of TlCaBaCuO and YBaCuO. The devices are based on the magnetic control of flux flow in their respective structures: a long junction or an array of weak links. The equivalent circuits of the two devices are similar: a low-impedance input control line, an output impedance of 3-20 Omega , and an active current-controlled element. The long junctions have tended to be slower, to have lower gain, and to be somewhat less noisy than their counterparts. Circuits such as narrowband and distributed amplifiers (50-GHz bandwidths, noise figures <3 dB), phase shifters (continuous with <2-dB loss, 4-40 GHz), logic gates (2-3-ps gate delays). and memories made using these devices are compared and analyzed in terms of performance.<<ETX>>
“1. 超导和约瑟夫森电路 QED”，“2. 混合量子系统”。
DOI：
--
发表时间：
2012
期刊：
影响因子：
--
作者：
Hiroaki Matsumiya;Hiroto Inoue;Masataka Hiraide;Kouichi Semba
通讯作者：
Kouichi Semba