Interface effect on metal-insulator transition of strained vanadium dioxide ultrathin films
Interface effect on metal-insulator transition of strained vanadium dioxide ultrathin films
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DOI：
10.1063/1.2424321
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发表时间：
2007-01
影响因子：
3.2
通讯作者：
K. Nagashima;T. Yanagida;Hidekazu Tanaka;T. Kawai
中科院分区：
文献类型：
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作者：
K. Nagashima;T. Yanagida;Hidekazu Tanaka;T. Kawai
研究了TiO2(001)单晶衬底上外延生长的应变VO2超薄膜的金属-绝缘体转变(MIT)的界面效应。改变 TiO2 基底的表面条件，例如粗糙度和表面重构，会导致 VO2 薄膜的 MIT 事件发生显着变化，包括转变温度和突变度。由于 VO2 薄膜 c 轴上的应变弛豫，表面重建的存在不利于有效施加应变效应。应变 VO2 薄膜中的突然 MIT 沉积在基板上，没有进行这种有害的表面重建，成功地将薄膜厚度保持在 5 nm 左右。
The interface effects on the metal-insulator transition (MIT) of strained VO2 ultrathin films grown epitaxially on TiO2 (001) single crystal substrate were investigated. Varying the surface conditions of TiO2 substrate, such as the roughness and the surface reconstructions, produced the remarkable changes in the MIT events of VO2 thin films, including the transition temperature and the abruptness. The presence of the surface reconstructions was found to be detrimental for applying effectively strain effects due to the strain relaxation in the c axis of VO2 thin films. The abrupt MIT in strained VO2 thin films, deposited on the substrate without such detrimental surface reconstructions, was successfully maintained down to around 5nm film thickness.