Time resolved study of self‐assembled InAs quantum dots
Time resolved study of self‐assembled InAs quantum dots
复制标题
DOI：
10.1063/1.117827
复制
发表时间：
1996-12
影响因子：
4
通讯作者：
Haiping Yu;S. Lycett;C. Roberts;R. Murray
中科院分区：
文献类型：
--
作者：
Haiping Yu;S. Lycett;C. Roberts;R. Murray
我们研究了在（001）取向 GaAs 衬底上通过分子束外延生长的自组装 InAs 量子点和超薄量子阱中的激子动力学。在低温下，量子阱的光致发光衰减时间几乎线性增加，而量子点系统的衰减时间与温度无关。然而，超过 50 K 时，点的衰减时间会线性增加，这可能是由于电子逃逸到润湿层或占据非辐射激子态所致。在高注入条件下，激发态弛豫的时间常数约为 500 ps。
We have investigated the exciton kinetics in self‐assembled InAs quantum dots and ultrathin quantum wells grown by molecular beam epitaxy on (001) oriented GaAs substrates. At low temperatures, the photoluminescence decay time of the quantum wells increases almost linearly while the decay time of the quantum dot system is independent of temperature. However, above 50 K there is a linear increase in the decay time of the dots which may be due to electrons escaping into the wetting layer or occupation of nonradiative exciton states. Under the conditions of high injection, relaxation from the excited states has a time constant of about 500 ps.