A germinal center-independent pathway generates unswitched memory B cells early in the primary response.
A germinal center-independent pathway generates unswitched memory B cells early in the primary response.
复制标题
DOI：
10.1084/jem.20111696
复制
发表时间：
2012-03-12
期刊：
影响因子：
--
通讯作者：
Jenkins MK
中科院分区：
文献类型：
--
作者：
Taylor JJ;Pape KA;Jenkins MK
早期的IgM+和转换的IG+记忆B细胞是由生发中心（GC）非依赖性途径发育而来的，而晚期转换的记忆细胞是GC依赖性的。记忆B细胞可以由经典的生发中心（GC）途径或不太了解的GC-独立途径产生。我们使用基于抗原的细胞富集来评估这些途径对多克隆记忆B细胞库的相对贡献。我们鉴定了一个CD38 + GL 7 + B细胞前体群体，其在强烈的CD40刺激下以GC非依赖性方式直接分化为IgM+或同种型转换（sw）Ig+记忆B细胞。或者，CD 38 + GL 7 + B细胞前体有可能成为Bcl-6 + GC细胞，然后产生主要的swIg+记忆B细胞。这些结果表明，早期IgM+和swIg+记忆B细胞是GC非依赖性途径的产物，而后来转换的Ig+记忆B细胞是GC细胞的产物。
Early IgM+ and switched Ig+ memory B cells develop from a germinal center (GC)–independent pathway, whereas late switched memory cells are GC dependent. Memory B cells can be produced from the classical germinal center (GC) pathway or a less understood GC-independent route. We used antigen-based cell enrichment to assess the relative contributions of these pathways to the polyclonal memory B cell pool. We identified a CD38+ GL7+ B cell precursor population that differentiated directly into IgM+ or isotype-switched (sw) Ig+ memory B cells in a GC-independent fashion in response to strong CD40 stimulation. Alternatively, CD38+ GL7+ B cell precursors had the potential to become Bcl-6+ GC cells that then generated primarily swIg+ memory B cells. These results demonstrate that early IgM+ and swIg+ memory B cells are products of a GC-independent pathway, whereas later switched Ig+ memory B cells are products of GC cells.