Structure and quality controlled growth of InAs nanowires through catalyst engineering
Structure and quality controlled growth of InAs nanowires through catalyst engineering
复制标题
通过催化剂工程控制 InAs 纳米线的结构和质量控制生长
DOI：
10.1007/s12274-014-0524-x
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发表时间：
2014
期刊：
影响因子：
9.9
通讯作者：
Zou Jin
中科院分区：
文献类型：
--
作者：
Zhang Zhi;Lu Zhenyu;Xu Hongyi;Chen Pingping;Lu Wei;Zou Jin
In this study, the structure and quality controlled growth of InAs nanowires using Au catalysts in a molecular beam epitaxy reactor is presented. By tuning the indium concentration in the catalyst, defect-free wurtzite structure and defect-free zinc blende structure InAs nanowires can be induced. It is found that these defect-free zinc blende structure InAs nanowires grow alongdirections with four low-energy {111} and two {110} side-wall facets and adopt thecatalyst/nanowire interface. Our structural and chemical characterization and calculations identify the existence of a catalyst supersaturation threshold for the InAs nanowire growth. When the In concentration in the catalyst is sufficiently high, defect-free zinc blende structure InAs nanowires can be induced. This study provides an insight into the manipulation of crystal structure and structure quality of III–V semiconductor nanowires through catalyst engineering.
