Doping dependent density of states and pseudogap behavior in La1−xSrxCuO4
Doping dependent density of states and pseudogap behavior in La1−xSrxCuO4
复制标题
La1−xSrxCuO4 中掺杂相关的态密度和赝能隙行为
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
S. Uchida
中科院分区：
文献类型：
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作者：
A. Ino;T. Mizokawa;K. Kobayashi;A. Fujimori;T. Sasagawa;T. Kimura;K. Kishio;K. Tamasaku;H. Eisaki;S. Uchida
We have made a high-resolution photoemission study of ${mathrm{La}}_{2ensuremath{-}x}{mathrm{Sr}}_{x}mathrm{Cu}{mathrm{O}}_{4}$ in a wide hole concentration ( $x$) range from a heavily overdoped metal to an undoped insulator. As $x$ decreases, the spectral density of states at the chemical potential ( $ensuremath{mu}$) is suppressed with an $x$ dependence similar to the suppression of the electronic specific heat coefficient. In the underdoped region, the spectra show a pseudogap structure on the energy scale of 0.1 eV. The width of the pseudogap increases with decreasing $x$ following the $x$ dependence of the characteristic temperatures of the magnetic susceptibility and the Hall coefficient.
We have made a high-resolution photoemission study of ${mathrm{La}}_{2ensuremath{-}x}{mathrm{Sr}}_{x}mathrm{Cu}{mathrm{O}}_{4}$ in a wide hole concentration ( $x$) range from a heavily overdoped metal to an undoped insulator. As $x$ decreases, the spectral density of states at the chemical potential ( $ensuremath{mu}$) is suppressed with an $x$ dependence similar to the suppression of the electronic specific heat coefficient. In the underdoped region, the spectra show a pseudogap structure on the energy scale of 0.1 eV. The width of the pseudogap increases with decreasing $x$ following the $x$ dependence of the characteristic temperatures of the magnetic susceptibility and the Hall coefficient.