Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect
Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect
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通过门控双极效应在异质结处实现自旋相关重组的巨大放大
DOI：
10.1063/1.4747495
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发表时间：
2012
影响因子：
4
通讯作者：
P. Lenahan
中科院分区：
文献类型：
--
作者：
T. Aichinger;P. Lenahan
我们展示了一种在metal-oxide-semiconductor-field-effect-transistors中进行自旋相关复合的方法，该方法(I)极大地放大了所研究的晶体管电流的自旋相关部分，并且(Ii)将测量的灵敏度仅集中在技术上最相关的缺陷，即半导体/氧化物界面上的缺陷。我们展示了远超过一个数量级的灵敏度增益和更好的分辨率光谱。灵敏度的提高将数据采集时间缩短了数量级，并显著增强了SDR的分析能力。非常大的放大效应也可能对磁共振控制的自旋电子晶体管感兴趣。
We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.