Perpendicular shape anisotropy spin transfer torque-MRAM: determination of pillar tilt angle from 3D Stoner–Wohlfarth astroid analysis
Perpendicular shape anisotropy spin transfer torque-MRAM: determination of pillar tilt angle from 3D Stoner–Wohlfarth astroid analysis
复制标题
垂直形状各向异性自旋转移矩-MRAM：通过 3D Stoner-Wohlfarth 小行星分析确定柱倾斜角度
DOI：
--
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
B. Dieny
中科院分区：
文献类型：
--
作者：
N. Perrissin;N. Caçoilo;G. Grégoire;S. Lequeux;L. Tillie;N. Strelkov;A. Chavent;S. Auffret;L. Buda;R. Sousa;L. Vila;I. Prejbeanu;B. Dieny
垂直形状各向异性自旋转移矩磁性随机存取存储器（PSA-STT-MRAM）的概念包括显着增加STT-MRAM中存储层的厚度至与单元直径相当的值，从而在该层中引起垂直形状各向异性。这种强大的体各向异性源使我们能够将 STT-MRAM 的尺寸缩小可扩展性扩展到 10 nm 以下的技术节点。然而，由于图案化磁隧道结柱的高纵横比，其中一些可能在蚀刻过程中掉落或变得倾斜。为了解释在这些 PSA-STT-MRAM 单元上测量的磁阻回路，了解施加场相对于柱轴的准确方向非常重要。我们在此介绍基于 3D Stoner Wohlfarth 小行星分析的实验程序，该程序使我们能够确定支柱倾斜角度。
The concept of perpendicular shape anisotropy spin-transfer-torque magnetic random access memory (PSA-STT-MRAM) consists of significantly increasing the thickness of the storage layer in STT-MRAM to values comparable to the cell diameter so as to induce a perpendicular shape anisotropy in this layer. This robust source of bulk anisotropy allows us to extend the downsize scalability of STT-MRAM towards a sub-10 nm technological node. However, due to the high aspect ratio of the patterned magnetic tunnel junction pillars, some of them may fall during the etching process or become tilted. To interpret the magnetoresistance loops measured on these PSA-STT-MRAM cells, it is important to know the exact direction of the applied field with respect to the pillar axis. We present here an experimental procedure based on 3D Stoner Wohlfarth astroid analysis which allows us to determine the pillar tilt angle.