Pattern replication in EUV interference lithography
Pattern replication in EUV interference lithography
复制标题
EUV 干涉光刻中的图案复制
DOI：
10.2494/photopolymer.21.435
复制
发表时间：
2008
影响因子：
0.8
通讯作者：
H. Kinoshita
中科院分区：
文献类型：
--
作者：
Shota Suzuki;Y. Fukushima;R. Ohnishi;Takeo Watanabe;H. Kinoshita
在新SUBARU同步辐射装置的BL 3光束线上建立了单光栅极紫外干涉光刻（EUVIL）光束线。在透明光栅中，尝试用偏转磁铁作为光源，用钽层作为零阶光的吸收层。使用该系统，400 nm的L&S抗蚀剂图案复制在晶片上，这表明EUV干涉光刻技术采用偏转磁体作为光源的可能性。
Extreme ultraviolet interference lithography (EUVIL) beamline which employed a single grating was constructed at the BL3 beamline in NewSUBARU synchrotron radiation facility. Bending magnet was attempted as a light source, and Ta layer was employed as an absorber layer of 0th order light in transparent grating. Using this system, 400-nm L&S resist pattern was replicated on a wafer, which shows possibility of EUV interference lithographic technology employing bending magnet as a light source.