Sub-5 nm Lithography with Single GeV Heavy Ions Using Inorganic Resist
Sub-5 nm Lithography with Single GeV Heavy Ions Using Inorganic Resist
复制标题
使用无机抗蚀剂使用单 GeV 重离子进行亚 5 nm 光刻
DOI：
10.1021/acs.nanolett.0c04304
复制
发表时间：
2021-03-08
期刊：
影响因子：
10.8
通讯作者：
Duan, Huigao
中科院分区：
文献类型：
--
作者：
Liu, Qing;Zhao, Jing;Duan, Huigao
In this work, we demonstrate a process having the capability to realize single-digit nanometer lithography using single heavy ions. By adopting 2.15 GeV Kr-86(26+) ions as the exposure source and hydrogen silsesquioxane (HSQ) as a negative-tone inorganic resist, ultrahigh-aspect-ratio nanofilaments with sub-5 nm feature size, following the trajectory of single heavy ions, were reliably obtained. Control experiments and simulation analysis indicate that the high-resolution capabilities of both HSQ resist and the heavy ions contribute the sub-5 nm fabrication result. Our work on the one hand provides a robust evidence that single heavy ions have the potential for single-digit nanometer lithography and on the other hand proves the capability of inorganic resists for reliable sub-5 nm patterning. Along with the further development of heavy-ion technology, their ultimate patterning resolution is supposed to be more accessible for device prototyping and resist evaluation at the single-digit nanometer scale.
