Incorporation, Diffusion and Agglomeration of Carbon in Silicon
Incorporation, Diffusion and Agglomeration of Carbon in Silicon
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碳在硅中的结合、扩散和团聚
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
W. Fahrner
中科院分区：
文献类型：
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作者：
R. Job;A. Ulyashin;W. Fahrner
提出了一种新的非破坏性和非接触式技术，用于空间分辨检测电子器件和MOS材料中的小泄漏电流。高灵敏度的锁定红外（IR-）热成像用于定位漏电流引起的温度变化低至10 μK，横向分辨率低至5 μm。大约1 mA的漏电流可以在几秒钟内定位，并且在不到1小时的测量后可以检测到一些μA。
A novel non-destructive and non-contacting technique for the spatially resolved detection of small leakage currents in electronic devices and MOS materials is presented. Highly-sensitive lock-in infrared (IR-) thermography is used to localize leakage current induced temperature variations down to 10 μK at a lateral resolution down to 5 μm. Leakage currents of about 1 mA can be localized within seconds and some μA may be detected after less than 1 h measurement.