Photoluminescence spectra of clusters of group IV elements embedded in SiO2 matrices
Photoluminescence spectra of clusters of group IV elements embedded in SiO2 matrices
复制标题
嵌入 SiO2 基质中的 IV 族元素簇的光致发光光谱
DOI：
10.1007/bf01429126
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
K. Yamamoto
中科院分区：
文献类型：
--
作者：
Shin Hayashi;Y. Kanzawa;M. Kataoka;T. Nagareda;K. Yamamoto
采用射频共溅射技术制备了含有C、Si和Ge原子的sio2薄膜，并测量了它们的拉曼光谱和光致发光光谱。得到的拉曼光谱非常宽，表明IV族元素以团簇的形式嵌入。含有C团簇的样品在2.1 ~ 2.2eV（肉眼可见）附近表现出很强的光致发光峰。含有Ge和Si团簇的薄膜在约1.6 ~ 1.8eV处显示出发光峰。对于含有生长良好的微晶（直径为几纳米）的样品，没有观察到强发光。
Using a rf co-sputtering technique, SiO2films containing C, Si and Ge atoms were prepared and their Raman and photoluminescence spectra were measured. Raman spectra obtained are very broad indicating that the group IV elements are embedded in the form of clusters. The samples containing C clusters showed a very strong photoluminescence peak at around 2.1∼2.2eV (visible with naked eye). The films containing Ge and Si clusters showed luminescence peaks at around 1.6∼1.8eV. Strong luminescence was not observed for the samples containing well grown microcrystals a few nanometers in diameter.