High-Resolution Electron Microscopy of Extended Defects in Wurtzite Crystals
High-Resolution Electron Microscopy of Extended Defects in Wurtzite Crystals
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纤锌矿晶体中扩展缺陷的高分辨率电子显微镜
DOI：
10.1143/jjap.33.1114
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发表时间：
1994
影响因子：
1.5
通讯作者：
Shin Takeuchi Shin Takeuchi
中科院分区：
文献类型：
--
作者：
Kunio Suzuki Kunio Suzuki;Masaki Ichihara Masaki Ichihara;Shin Takeuchi Shin Takeuchi
本文用高分辨电子显微术研究了五种纤锌矿晶体ZnO、BeO、AlN、GaN和InN中的晶格缺陷。在BeO和GaN中产生了高密度的层错。用弱束技术，观察到BeO中的基底位错的解离。通过高分辨点阵像观察，在ZnO、AlN和InN中观察到了解离和未解离的60°位错。由分波分离估算的层错能在ZnO中为0.10±0.02 J/m2，在BeO中为0.041±0.009 J/m2，在AlN中为0.22±0.07 J/m2，在InN中为0.041±0.008 J/m2。纤锌矿晶体中的层错能与晶体的c/a比相关。在ZnO和BeO中也观察到沿基面沿着爬离的a+c位错。
Lattice defects in five wurtzite crystals, ZnO, BeO AlN GaN and InN, have been studied by high-resolution electron microscopy for samples pulverized at room temperature. High-density stacking faults were produced in BeO and GaN. With the weak-beam technique, dissociation of basal dislocations was observed in BeO. By high-resolution lattice image observation, both dissociated and undissociated 60°-dislocations were observed in ZnO, AlN and InN. Stacking fault energies were estimated from the separation of partials to be 0.10±0.02 J/m2 in ZnO, 0.041±0.009 J/m2 in BeO, 0.22±0.07 J/m2 in AlN and 0.041±0.008 J/m2 in InN. Stacking fault energies in wurtzite crystals have been correlated with the c/a ratio of the crystals. a+c dislocations climb-dissociated along the basal plane were also observed in ZnO and BeO.