Band Alignment of CdS/Cu_2ZnSnSe_4 Heterointerface and Solar Cell Performances
Band Alignment of CdS/Cu_2ZnSnSe_4 Heterointerface and Solar Cell Performances
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CdS/Cu_2ZnSnSe_4异质界面的能带排列与太阳能电池性能
DOI：
10.1557/adv.2017.315
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
N. Terada
中科院分区：
文献类型：
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作者：
T. Nagai;Shinho Kim;H. Tampo;K. Kim;H. Shibata;Shin’ichi Takaki;Kenta Kawasaki;Suehiro Kawamura;T. Shimamura;K. Matsubara;S. Niki;N. Terada
利用x射线光发射光谱（XPS）、紫外光发射光谱（UPS）和逆光发射光谱（IPES）测定了CdS/ Cu_2ZnSnSe_4 （CZTSe）异质界面上的导带偏移（CBO）和价带偏移（VBO）分别为+0.56和+0.89eV。正的CBO值，即所谓的“尖峰”结构，意味着导带的位置高于吸收层的位置。计算得到的CBO值为+0.56 eV，表明CdS/CZTSe界面的导带对准足以形成电子势垒。尽管CdS/CZTSe异质结太阳能电池在界面处的传导带存在如此大的尖峰结构，但其转换效率仍可达到8.7%。
We determined that the conduction band offset (CBO) and the valence band offset (VBO) at the CdS/ Cu_2ZnSnSe_4 (CZTSe) heterointerface are +0.56 and +0.89eV, respectively, by using X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS) and inversed photoemission spectroscopy (IPES). A positive CBO value, so-called “spike” structure, means that the position of conduction band becomes higher than that of absorber layer. The evaluated CBO of +0.56 eV suggests that the conduction band alignment at CdS/CZTSe interface is enough to become an electron barrier. Despite such a large spike structure in the conduction band at the interface, a conversion efficiency of 8.7 % could be obtained for the CdS/CZTSe heterojunction solar cells.