Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
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DOI：
10.1016/j.jcrysgro.2012.03.035
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发表时间：
2012-06
影响因子：
1.8
通讯作者：
Juntao Zhu;Ying Fan;Huixuan Zhang;G. Lu;H. Wang;Debo Zhao;D. Jiang;Z. Liu;S. Zhang
中科院分区：
文献类型：
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作者：
Juntao Zhu;Ying Fan;Huixuan Zhang;G. Lu;H. Wang;Debo Zhao;D. Jiang;Z. Liu;S. Zhang
