Effect of repulsive and attractive scattering centers on the magnetotransport properties of a two-dimensional electron gas.
Effect of repulsive and attractive scattering centers on the magnetotransport properties of a two-dimensional electron gas.
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DOI：
10.1103/physrevlett.59.1349
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发表时间：
1987-09
影响因子：
8.6
通讯作者：
Haug;Gerhardts;Klitzing;Ploog
中科院分区：
文献类型：
--
作者：
Haug;Gerhardts;Klitzing;Ploog
在二维电子气体附近系统地掺杂额外Be或Si杂质的GaAs/AlGaAs异质结构显示出量子霍尔高原和相对于朗道能级填充因子期望值的纵向电阻率ρ xx的最小值的明显变化。观察到一个量子霍尔平台ρ xy= h/ e2，它不跨越经典直线ρ xy 0= B/n se。结果可以用微观输运计算来解释，该计算强调了单个杂质对电子的非玻恩散射。
GaAs/AlGaAs heterostructures systematically doped with additional Be or Si impurities near the two-dimensional electron gas show distinct shifts of the quantum Hall plateaus and of the minima in the longitudinal resistivity ρ xx relative to the expected values of the Landau-level filling factor. A quantum Hall plateau ρ xy= h/e 2 which does not cross the classical straight line ρ xy 0= B/n s e is observed. The results are explained by a microscopic transport calculation emphasizing non-Born scattering of electrons by individual impurities.