Monitoring and control of RF thermal plasma diamond deposition via substrate biasing
Monitoring and control of RF thermal plasma diamond deposition via substrate biasing
复制标题
通过基底偏压监测和控制射频热等离子体金刚石沉积
DOI：
10.1088/0957-0233/15/1/023
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发表时间：
2004
影响因子：
2.4
通讯作者：
F. Gitzhofer
中科院分区：
文献类型：
--
作者：
J. O. Berghaus;J. Meunier;F. Gitzhofer
在射频感应热等离子体化学气相沉积系统中，衬底被用作电探针以原位监测金刚石膜的演变。不断变化的电子发射电流使我们能够识别从初始成核阶段到金刚石生长阶段的过渡。将直流偏压施加到衬底上，并根据变化的生长要求原位调整极性，提供了一种独立于等离子体源控制金刚石形成的工具。
In a RF induction thermal plasma chemical vapour deposition system the substrate is used as an electrical probe to monitor the diamond film evolution in situ. The evolving electron emission current allows us to identify the transition from the initial nucleation stage to the diamond growth stage. A direct-current bias voltage is applied to the substrate, and the polarity is adjusted in situ according to the changing growth requirements, providing a tool for controlling the diamond formation independent of the plasma source.