10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides
10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides
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DOI：
10.3389/fphy.2021.659585
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发表时间：
2021-05
期刊：
影响因子：
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通讯作者：
J. Byers;K. Debnath;H. Arimoto;M. Husain;M. Sotto;J. Hillier;K. Kiang;D. Thomson;G. Reed;M. Charlton;S. Saito
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文献类型：
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作者：
J. Byers;K. Debnath;H. Arimoto;M. Husain;M. Sotto;J. Hillier;K. Kiang;D. Thomson;G. Reed;M. Charlton;S. Saito
在本文中，我们证明了通过打破双平面绝缘体上硅(SOI)光子晶体(PHC)鳍形波导中的左/右对称性，我们可以将通常使用的横向电(TE)偏振模耦合到横向磁(TM)偏振槽模。时域有限差分(FDTD)模拟表明，TE模与布里渊区内的强TM模耦合。宽带传输数据显示了完全失配的制造器件在TE带隙内用水平槽TM模识别的传播。这同时展示了TE到TM模式的转换，以及文献中报道的最窄的硅光子学SiO_2缝隙模传播(10 nm宽的缝隙)，这两者都有许多潜在的电信应用。
In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transverse-magnetic (TM) polarization slot-mode. Finite difference time domain (FDTD) simulations indicate that the TE mode couples to the robust TM mode inside the Brillouin zone. Broadband transmission data shows propagation identified with horizontal-slot TM mode within the TE bandgap for fully mismatched fabricated devices. This simultaneously demonstrates TE to TM mode conversion, and the narrowest Si photonics SiO2 slot-mode propagation reported in the literature (10 nm wide slot), which both have many potential telecommunication applications.