Observation of domain walls in PbZr0.2Ti0.8O3 thin film using scanning nonlinear dielectric microscopy
Observation of domain walls in PbZr0.2Ti0.8O3 thin film using scanning nonlinear dielectric microscopy
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DOI：
10.1063/1.1609252
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发表时间：
2003-09-29
影响因子：
4
通讯作者：
Ramesh, R
中科院分区：
文献类型：
--
作者：
Matsuura, K;Cho, Y;Ramesh, R
利用扫描非线性介电显微镜（SNDM）测量了PbZr0.2Ti0.8O3（PZT）薄膜中a畴（c轴在薄膜平面内）和c畴（c轴垂直于薄膜表面）的线性介电常数，证实了a畴的介电常数高于c畴的介电常数.我们观察到90 ° a-c畴壁和180 ° c-c畴壁，实验发现180 ° c-c畴壁比90 ° a-c畴壁小。(C)2003年，美国物理学会。
Using scanning nonlinear dielectric microscopy (SNDM), we measured the linear dielectric constant of a domains (c axis in the plane of the film) and c domains (c axis perpendicular to the film surface) in PbZr0.2Ti0.8O3 (PZT) thin film to confirm that the dielectric constant of the a domain is higher than that of the c domain. We observed 90degrees a-c domain walls and 180degrees c-c domain walls and found that, experimentally, the 180degrees c-c domain wall was smaller than the 90degrees a-c domain wall. (C) 2003 American Institute of Physics.