Sulphur vacancies modified Cd0.5Zn0.5S/Bi2S3: Engineering localized surface plasma resonance enhanced visible-light-driven hydrogen evolution
Sulphur vacancies modified Cd0.5Zn0.5S/Bi2S3: Engineering localized surface plasma resonance enhanced visible-light-driven hydrogen evolution
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DOI：
10.1016/j.cej.2021.128868
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发表时间：
2021-02-20
影响因子：
15.1
通讯作者：
Chen, Gang
中科院分区：
文献类型：
--
作者：
Li, Meng;Sun, Jingxue;Chen, Gang
等离子体半导体纳米材料的光学和电子特性引起了人们的广泛关注。在本研究中，硫空位被调节到载流子密度为10(17)，类似于10(23)cm(-3)，具有局域表面等离子体共振（LSPR）的特征。由于LSPR的激发，半导体表面的等离子体电子被提升到一个更高的能态。这些电子可以克服BS与Cd0.5Zn0.5S （CZS）之间的能垒，直接转移到传导带（CB）的CZS组分中作为电子供体。这种效应可能导致半导体CB上更多的电子与H2O反应生成更多的氢。通过计算德拜长度，测量了等离子体中电荷效应的尺度。实验证明，LSPR有助于半导体中电子和空穴的有效分离，并显著提高了CZS/BS-1.5纳米复合材料的制氢效果。本研究为构建高效新型多相光催化剂提供了新的思路。
The optical and electronic properties of plasmonic semiconductor nanomaterials have attracted a lot of attention. In this study, sulfur vacancies was regulated to achieve carriers density of 10(17) similar to 10(23)cm(-3), with the characteristics of localized surface plasmon resonance (LSPR). Since the excitation of LSPR, the plasma electrons on the semiconductor surface are elevated to a higher energy state. These electrons can overcome the energy barrier between BS and Cd0.5Zn0.5S (CZS), directly transferred to the conduction band (CB) CZS components as electron donor. This effect may cause more electrons on the semiconductor CB to react with H2O to generate more hydrogen. By calculating the Debye length, the scale of the charge effect in the plasma is measured. It can be proved that LSPR is instrumental in the available separation of electrons and holes in semiconductors, and significantly improves the hydrogen production effect of CZS/BS-1.5 nanocomposites. This research furnishes new insights for the construction of efficient and novel polyphase photocatalysts.