Temperature dependence of reverse bias capacitance–voltage characteristics of Sn/p-GaTe Schottky diodes
Temperature dependence of reverse bias capacitance–voltage characteristics of Sn/p-GaTe Schottky diodes
复制标题
Sn/p-GaTe 肖特基二极管反向偏置电容电压特性的温度依赖性
DOI：
10.1088/0268-1242/19/2/020
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发表时间：
2004
影响因子：
1.9
通讯作者：
H. Efeoǧlu
中科院分区：
文献类型：
--
作者：
C. Coşkun;Ş. Aydoğan;H. Efeoǧlu
用定向冷冻法在非故意掺杂的p型栅上生长了肖特基势垒二极管，并用电容-电压技术表征了该二极管随温度(100-300K)的变化。用真空蒸发的锡作为肖特基势垒接触和In作为欧姆接触，可以生产出高质量的二极管。由电流-电压-温度和电容-电压-温度测量得到的肖特基势垒高度(BHS)之间的差异是由于金属/栅界面处普遍存在势垒高度不均匀而引入的BHS的空间分布。在考虑金属/栅界面微结构的基础上，研究了表观BHS偏差。研究发现，在较低的温度下，这种分布在接触区域上的弥散越来越大，这是两种技术获得的表观BHS之间差异增大的原因。
A Schottky barrier diode on unintentionally doped p-type GaTe grown by the directional freezing method was obtained and characterized by the capacitance–voltage technique as a function of temperature (100–300 K). Using vacuum evaporated Sn as the Schottky barrier contact and In for the ohmic contact, high-quality diodes were produced. The discrepancy between Schottky barrier heights (BHs) obtained from current–voltage–temperature and capacitance–voltage–temperature measurements is explained by the introduction of a spatial distribution of BHs due to barrier height inhomogeneities that prevail at the metal/GaTe interface. The deviations of apparent BHs were investigated by considering the microstructure of the metal/GaTe interface. It was found that the dispersion of this distribution across the contact area grew increasingly larger at lower temperatures and was responsible for the increasing difference between apparent BHs obtained from the two techniques.