"Measurement of Silicon Strength as Affected by Wafer Back Processing"
"Measurement of Silicon Strength as Affected by Wafer Back Processing"
复制标题
“测量受晶圆背面处理影响的硅强度”
DOI：
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复制
发表时间：
1987
期刊：
影响因子：
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通讯作者：
L. Lofgran
中科院分区：
文献类型：
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作者：
G. Hawkins;H. Berg;M. Mahalingam;G. Lewis;L. Lofgran
本文用弯曲法测量了硅片的强度分布。切屑强度受加工过程中引入的缺陷控制，切屑断裂后可对关键缺陷进行定位和分析。根据硅的断裂韧性可以相当好地预测缺陷尺寸。晶片背面蚀刻强化了芯片，但反应取决于晶片是研磨还是研磨。
The distribution of strength of silicon chips has been measured by bending a chip between a soft ball and pad. The chip strength is controlled by flaws introduced by processing and the critical flaws can be located and analyzed after the chip breaks. The flaw sizes can be predicted reasonably well from the fracture toughness of silicon. Wafer back etching strengthens the chip, but the response depends on whether the wafer was lapped or ground.