Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness
Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness
复制标题
超高分辨率聚焦电子束诱导加工：基材厚度的影响
作者：
W. V. Van Dorp;I. Lazić;A. Beyer;A. Gölzhäuser;J. Wagner;T. Hansen;C. W. Hagen
通常认为，聚焦电子束诱导加工（FEBIP）中的生长不仅是由初级电子引起的，而且（甚至主要）是由次级电子（SE）引起的。如果这是真的，FEBIP的增长率可以通过修改SE收益率来改变。从我们的Monte Carlo模拟结果表明，SE产量的变化强烈与衬底厚度低于SE逃逸深度的厚度。然而，我们的实验结果表明，生长速率是独立的衬底厚度。在1和9 nm厚的碳基底上写入平均尺寸为约3 nm的沉积物。模拟和实验之间的明显矛盾，解释了模拟SE发射从碳基板与铂沉积物的表面上。看来，SE排放是由沉积物，而不是碳基板，即使是小至0.32纳米3的沉积物占主导地位。
It is often suggested that the growth in focused electron beam induced processing (FEBIP) is caused not only by primary electrons, but also (and even predominantly) by secondary electrons (SEs). If that is true, the growth rate for FEBIP can be changed by modifying the SE yield. Results from our Monte Carlo simulations show that the SE yield changes strongly with substrate thickness for thicknesses below the SE escape depth. However, our experimental results show that the growth rate is independent of the substrate thickness. Deposits with an average size of about 3 nm were written on 1 and 9 nm thick carbon substrates. The apparent contradiction between simulation and experiment is explained by simulating the SE emission from a carbon substrate with platinum deposits on the surface. It appears that the SE emission is dominated by the deposits rather than the carbon substrate, even for deposits as small as 0.32 nm3.