Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN
Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN
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3 MeV电子辐照对Eu掺杂GaN光致发光性能的影响
DOI：
10.1063/1.1504873
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发表时间：
2002
影响因子：
4
通讯作者：
H. Itoh
中科院分区：
文献类型：
--
作者：
Y. Nakanishi;A. Wakahara;H. Okada;A. Yoshida;T. Ohshima;H. Itoh
研究了3mev电子辐照对铕掺杂GaN光致发光性能的影响。通过离子注入将Eu引入到蓝宝石衬底上生长的GaN外延层中。发现注入铕的峰值浓度为几个原子百分比。电子剂量在1016-3×1017 cm−2范围内。在13 ~ 295 K的温度范围内，用氦镉激光器作为激发源测量了PL。Eu3+中5D0−7F2跃迁所对应的PL强度与电子影响关系不大。相比之下，未掺杂氮化镓近带边发射的PL强度随着电子影响的增加而降低。
The effect of 3 MeV electron irradiation on the photoluminescence (PL) properties of Eu-doped GaN was investigated. Eu was introduced into GaN epitaxial layers grown on sapphire substrates by ion implantation. The peak concentration of implanted Eu was found to be a few atomic percent. The electron dose was in the range of 1016–3×1017 cm−2. PL was measured in the temperature range of 13–295 K by using a He–Cd laser as the excitation source. PL intensity corresponding to the transition of 5D0−7F2 in Eu3+ was hardly dependent on the electron fluence. In contrast, the PL intensity of the near-band-edge emission from undoped GaN decreased when increasing the electron fluence.