Preparation of highly (100)-oriented CeO2 films on polycrystalline Al2O3 substrates by laser chemical vapor deposition
Preparation of highly (100)-oriented CeO2 films on polycrystalline Al2O3 substrates by laser chemical vapor deposition
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DOI：
10.1016/j.surfcoat.2010.04.037
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发表时间：
2010-08
影响因子：
5.4
通讯作者：
P. Zhao;A. Ito;R. Tu;T. Goto
中科院分区：
文献类型：
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作者：
P. Zhao;A. Ito;R. Tu;T. Goto
采用激光化学气相沉积法在Al_2O_3衬底上制备了CeO_2薄膜。在PL=101- 167 W（Tdep=792- 945 K）下制备了（100）取向的CeO 2薄膜。（200）反射织构系数在PL= 113 W（Tdep= 836 K）时达到最大值6.7。（100）取向的CeO 2薄膜由颗粒状晶粒组成，横截面呈柱状。（100）取向CeO 2薄膜的沉积速率（Rdep）在PL= 152 W（Tdep= 912 K）时达到最大值43μmh− 1。
CeO2films were prepared on Al2O3substrates by laser chemical vapor deposition at different laser power (PL) up to 182W. The (100)-oriented CeO2films were prepared at PL=101–167W (Tdep=792–945K). The texture coefficient (TC) of (200) reflection had a maximum of 6.7 at PL=113W (Tdep=836K). The (100)-oriented CeO2films consisted of granular grains and showed a columnar cross section. The deposition rates (Rdep) of (100)-oriented CeO2films showed a maximum of 43μmh−1at PL=152W (Tdep=912K).