Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits
Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits
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DOI：
10.1109/tns.2007.908461
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发表时间：
2007-12
影响因子：
1.8
通讯作者：
M. Mclain;H. Barnaby;K. Holbert;peixiong zhao;H. Shah;A. Amort;M. Baze;J. Wert
中科院分区：
文献类型：
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作者：
M. Mclain;H. Barnaby;K. Holbert;peixiong zhao;H. Shah;A. Amort;M. Baze;J. Wert
本文评估了2.5 V I/O晶体管和常规阈值MOSFET的90 nm商业体CMOS工艺的辐射响应。从Co电离辐射实验中获得的数据表明，增强TID敏感性的I/O器件和电路，这是由于p型体掺杂。一个定量模型被用来分析掺杂和氧化物俘获电荷积累的影响沿着浅沟槽隔离氧化物的侧壁。这些影响被捕获在一般的静电方程的表面电位，这可以与关态漏电流。器件模拟与实验测量和分析模型一起使用，以提供对每种器件类型的辐射响应的物理见解。
This paper evaluates the radiation responses of 2.5 V I/O transistors and regular-threshold MOSFETs from a 90 nm commercial bulk CMOS technology. The data obtained from Co ionizing radiation experiments indicate enhanced TID susceptibility in I/O devices and circuits, which is attributed to the p-type body doping. A quantitative model is used to analyze the effects of doping and oxide trapped charge buildup along the sidewall of the shallow trench isolation oxide. These effects are captured in the general electrostatic equation for surface potential, which can be correlated to off-state leakage current. Device simulations are used in concert with experimental measurements and the analytical model to provide physical insight into the radiation response of each device type.