Rotational Analysis of Ultraviolet Bands of Silicon Monoxide
Rotational Analysis of Ultraviolet Bands of Silicon Monoxide
复制标题
一氧化硅紫外波段的旋转分析
DOI：
10.1103/physrev.42.498
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发表时间：
1932
期刊：
影响因子：
--
通讯作者：
P. G. Saper
中科院分区：
文献类型：
--
作者：
P. G. Saper
From measurements on silicon arc spectrograms a rotational analysis has been made of the (0,1), (0,2), (0,3), (0,4) and (1,4) bands of the ultraviolet band system of silicon monoxide (SiO). The bands were found to be due to a $^{1}\ensuremath{\Pi}\ensuremath{\rightarrow}^{1}\ensuremath{\Sigma}$ transition as was expected by analogy with the fourth positive bands of CO. Among the constants obtained from the analysis are A number of perturbations of the $Q$ branch lines were observed. Some conclusions were reached as to the nature of the perturbing levels. From measurements of band heads of this system made by Jevons and the results of the present analysis the following equation was obtained for the band origins: ${{\ensuremath{\nu}}_{0}=,42835.3+851.51({v}^{\ensuremath{'}}+\frac{1}{2})\ensuremath{-}6.143{({v}^{\ensuremath{'}}+\frac{1}{2})}^{2}+}{0.0437{({v}^{\ensuremath{'}}+\frac{1}{2})}^{3}\ensuremath{-}1242.03({v}^{\ensuremath{'}\ensuremath{'}}+\frac{1}{2})+}{6.047{({v}^{\ensuremath{'}\ensuremath{'}}+\frac{1}{2})}^{2}\ensuremath{-}0.00329{({v}^{\ensuremath{'}\ensuremath{'}}+\frac{1}{2})}^{3}.}$
