Effect of secondary ion beam energy and oxygen partial pressure on the structural, morphological and optical properties of ITO films prepared by DMIBD technique
Effect of secondary ion beam energy and oxygen partial pressure on the structural, morphological and optical properties of ITO films prepared by DMIBD technique
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DOI：
10.1016/s0257-8972(02)00020-8
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发表时间：
2002-05-15
影响因子：
5.4
通讯作者：
Kim, S
中科院分区：
文献类型：
--
作者：
Kim, D;Kim, S
利用DMIBD技术在玻璃衬底上制备了ITO薄膜，研究了二次离子束能量和氧分压对ITO薄膜表面形貌、结晶度和光学性能的影响。在沉积过程中，衬底温度约为70摄氏度。原子力显微镜测量表明，在50 eV沉积条件下制备的薄膜具有多晶薄膜的特征，具有较大的颗粒结构。X射线衍射谱表明，本研究制备的ITO薄膜具有多晶结构。这意味着表面吸附原子有足够的迁移率，通过与二次硅离子的碰撞传递动能在衬底上迁移。然而，由于辐射损伤，能量过高的二次离子束轰击减小了晶粒尺寸，并使表面粗糙。ITO薄膜在可见光区域的光学透过率与薄膜的结构和表面形态有关。在氧分压为1.3×10~(-2)Pa和50 eV时，在550 nm处获得了最高的光学透过率为85%，最低的电阻率为4×10~(-4)欧米姆。(C)2002 Elsevier Science B.V.保留所有权利。
We produced indium tin oxide (ITO) films on glass substrates by DMIBD technology and investigated the effect of secondary ion beam energy and oxygen partial pressure on the surface morphology, crystallinity and optical property of ITO films. During deposition, substrate temperature was approximately 70 degreesC. AFM measurements shown that the film deposited at 50 eV exhibits the characteristic of polycrystalline thin films with a larger grain structure than that of other conditions. The XRD spectra indicated that the ITO films, which were produced in this study, have polycrystalline structures. It means that surface adatoms had enough mobility to migrate on the substrate with transferred kinetic energy by colliding secondary Si- ions. However, too energetic secondary ion beam bombardments decreased grain size and also roughened surface morphology due to radiation damage. Optical transmittance of ITO film in the visible region was related with structural and surface morphological properties. In this study, the highest optical transmittance of 85% at the wavelength of 550 nm and the lowest resistivity of 4 X 10(-4) Omegacm were obtained at the oxygen partial pressure of 1.3 X 10(-2) Pa and 50 eV, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.