Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method
Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method
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一种新的分解方法对按比例缩小的MOSFET漏极电流局部变化的分析与展望
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发表时间：
2010
期刊：
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通讯作者：
T. Mogami
中科院分区：
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作者：
T. Tsunomura;Ashok Kumar;T. Mizutani;C. Lee;A. Nishida;K. Takeuchi;S. Inaba;S. Kamohara;K. Terada;T. Hiramoto;T. Mogami
通过将漏极电流局部变化分解为电流变化分量，分析了漏极电流局部变化的原因。除了VTH和Gm分量外，新发现沟道电位波动引起的“电流起始”变化对电流变化的影响很大，而Gm分量在饱和区相对较小。结果表明，随着沟道掺杂剂的减少，VTH和电流起始分量都减小，表明本征沟道对降低电流变化非常有效。
Causes of drain current local variability are analyzed by decomposing into current variability components. Besides VTH and Gm components, it is newly found that effects of “current onset” variability caused by channel potential fluctuations largely contribute to the current variability and that Gm component is relatively small in the saturation region. It is shown that both VTH and current onset components decreases with reducing channel dopants, indicating that intrinsic channel is very effective to reduce current variability.