GaN-based digital transmitter chain utilizing push-pull gate drivers for high switching speed and built-in DPD
GaN-based digital transmitter chain utilizing push-pull gate drivers for high switching speed and built-in DPD
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基于 GaN 的数字发射器链，利用推挽式栅极驱动器实现高开关速度和内置 DPD
DOI：
10.23919/eumic.2017.8230669
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
W. Heinrich
中科院分区：
文献类型：
--
作者：
Florian Huhn;A. Wentzel;W. Heinrich
本文提出了一种全数字发射链，包括调制器和数字微波功率放大器（PA）MMIC。它使用推挽驱动器的D类末级的门，以提高开关速度。据作者所知，这是第一次在GaN HEMT工艺上实现这种方法。在900 MHz载波调制基带信号的灵活和紧凑的芯片的性能进行评估。为了将IQ信号编码为二进制流，使用具有内置DPD的调制方案，从而导致更高的排队效率，因为没有额外的计算能力被消耗。ACLR值超过43.5 dB，几乎满足3GPP频谱要求。实现的信号质量与其他出版物的比较。
This paper presents a fully digital transmitter chain, including a modulator and a digital microwave power amplifier (PA) MMIC. It uses push-pull drivers for the gates of the class-D final stage for improved switching speed. To the authors' knowledge this is the first time this approach is implemented on a GaN HEMT process. The performance of the flexible and compact chip is evaluated with modulated baseband signals at a 900 MHz carrier. For encoding the IQ signals into a binary stream, a modulation scheme with a built-in DPD is used, resulting in a higher line-up efficiency as no additional computational power is dissipated. ACLR values of more than 43.5 dB are reached almost fulfilling the 3GPP spectral requirements. A comparison of achieved signal quality to other publications is given.