Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
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DOI：
10.1007/s12274-014-0430-2
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发表时间：
2014-05-01
期刊：
影响因子：
9.9
通讯作者：
Xiao, Kai
中科院分区：
文献类型：
--
作者：
Hu, Pingan;Zhang, Jia;Xiao, Kai
基于二维栅极纳米片的高灵敏度光电晶体管已经被证实。利用外加的栅极电压可以有效地调节GaTe纳米片光电晶体管的性能（光响应性、探测性）。器件具有274.3 AW（-1）的超高光响应度。2D GaTe器件的探测能力与10(12)Jones相似，超过了目前使用的InGaAs光电探测器(10（11)-10(12)Jones）。为了揭示GaTe纳米片中增强光电流的来源，对电子结构进行了理论建模，表明GaTe纳米片也具有直接带隙结构，这有助于促进光子吸收和激子的产生。这项工作表明，GaTe纳米片是一种很有前途的高性能光电探测器材料。
Highly sensitive phototransistors based on two-dimensional (2D) GaTe nanosheet have been demonstrated. The performance (photoresponsivity, detectivity) of the GaTe nanosheet phototransistor can be efficiently adjusted by using the applied gate voltage. The devices exhibit an ultrahigh photoresponsivity of 274.3 AW(-1). The detectivity of 2D GaTe devices is similar to 10(12) Jones, which surpasses that of currently-exploited InGaAs photodetectors (10(11)-10(12) Jones). To reveal the origin of the enhanced photocurrent in GaTe nanosheets, theoretical modeling of the electronic structures was performed to show that GaTe nanosheets also have a direct bandgap structure, which contributes to the promotion of photon absorption and generation of excitons. This work shows that GaTe nanosheets are promising materials for high performance photodetectors.