A novel dual-polarity device with symmetrical/asymmetrical S-type I-V characteristics for ESD protection design
A novel dual-polarity device with symmetrical/asymmetrical S-type I-V characteristics for ESD protection design
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DOI：
10.1109/led.2005.861601
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发表时间：
2006
影响因子：
4.9
通讯作者：
J. Salcedo;J. Liou
中科院分区：
文献类型：
--
作者：
J. Salcedo;J. Liou
A novel and compact device with adjustable forward and reverse conductions and symmetrical/asymmetrical I-V characteristics for ESD (electrostatic discharge) applications is presented. The device allows for the dual-polarity conduction with the proper selection of blocking junction configurations. This design enables high-level ESD protections for various mixed-signal integrated circuits operating under a wide range of symmetrical and asymmetrical bias conditions.
