Synthesis, Analysis, and Electrical Property Measurements of Compound Nanotubes in the B-C-N Ceramic System
Synthesis, Analysis, and Electrical Property Measurements of Compound Nanotubes in the B-C-N Ceramic System
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DOI：
10.1557/mrs2004.15
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发表时间：
2004-01
期刊：
影响因子：
5
通讯作者：
D. Golberg;Y. Bando;P. Dorozhkin;Z. Dong
中科院分区：
文献类型：
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作者：
D. Golberg;Y. Bando;P. Dorozhkin;Z. Dong
B-C-N 陶瓷系统中的纳米管结构是传统碳纳米管的一种有趣的替代品。由于能够在 B-C-N 三元相图中广泛改变纳米管的化学成分，并改变多壁结构中富 C 或富 BN 管状壳的堆叠，因此为调节纳米结构电性能开辟了广阔的前景。纯碳纳米管是金属或窄带隙半导体，具体取决于螺旋度和直径，而 BN 是绝缘体，其带隙约为 5.0 eV，与这些参数无关。因此，假设相对 B/C/N 比率和/或富含 BN 和富含 C 的域空间排列，而不是管螺旋度和直径，主要决定 B-C-N 纳米管电响应。这一特性对于纳米技术非常有价值：虽然管直径和螺旋度目前难以控制，但由于层状 C 和 BN 材料的同构性质，C 与 BN 的连续掺杂（反之亦然）相对容易进行。本文记录并讨论了陶瓷 B-C-N 体系中各种化合物纳米管的合成、显微分析和电性能测量的最新进展。
Nanotubular structures in the B-C-N ceramic system represent an intriguing alternative to conventional carbon nanotubes. Because of the ability to widely vary the chemical composition of nanotubes within the B-C-N ternary phase diagram and to change the stacking of C-rich or BN-rich tubular shells in multiwalled structures, a wide horizon opens up for tuning nanostructure electrical properties. Pure carbon nanotubes are metals or narrow-bandgap semiconductors, depending on the helicity and diameter, whereas those of BN are insulators with a ~5.0 eV gap independent of these parameters. Thus, the relative B/C/N ratios and/or BN-rich and C-rich domain spatial arrangements, rather than tube helicity and diameter, are assumed to primarily determine the B-C-N nanotube electrical response. This characteristic is highly valuable for nanotechnology: while tube diameter and helicity are currently difficult to control, continuous doping of C with BN, or vice versa, proceeds relatively easily due to the isostructural nature of layered C and BN materials. In this article, recent progress in the synthesis, microscopic analysis, and electrical property measurements of a variety of compound nanotubes in the ceramic B-C-N system is documented and discussed.