Monolithic Passive−Active Integration of Epitaxially Grown Quantum Dot Lasers on Silicon
Monolithic Passive−Active Integration of Epitaxially Grown Quantum Dot Lasers on Silicon
复制标题
硅上外延生长量子点激光器的单片被动-主动集成
DOI：
10.1002/pssa.202100522
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
J. Bowers
中科院分区：
文献类型：
--
作者：
Zeyu Zhang;C. Shang;J. Norman;R. Koscica;Kaiyin Feng;J. Bowers
在硅上外延生长的量子点激光器已经被证明显示出创纪录的低阈值、高温度耐受性和低反馈灵敏度。当生长在硅光子芯片上并与硅波导（WG）集成时，QD激光器为片上光源提供了相当经济和可扩展的解决方案。然而，还没有证明能够在硅光子芯片上生长和集成QD激光器的技术。在此，设计了一种新的器件平台，该平台能够将QD有源区与无源WG结构集成。通过这样做，复杂和高性能的激光器，如分布式布拉格反射器激光器，锁模激光器和采样光栅分布式布拉格反射器可调谐激光器在这个平台上进行了演示。相同的激光器外延堆叠可以容易地生长在硅光子芯片的衬底上，以允许从QD激光器腔到硅WG的光耦合。
Quantum dot (QD) lasers epitaxially grown on Si have already been demonstrated to show record low threshold, high temperature tolerance, and low feedback sensitivity. When grown on the silicon photonic chip and integrated with Si waveguides (WGs), QD lasers offer considerable economical and foundry‐scalable solutions to on‐chip light sources. Yet, a technology that enables both growth and integration of QD lasers on a silicon photonic chip has not been demonstrated. Herein, a novel device platform which enables integration of the QD active region with passive WG structures is designed. By doing so, complex and high‐performance lasers such as distributed Bragg reflector lasers, mode‐locked lasers, and sampled grating distributed Bragg reflector tunable lasers are demonstrated in this platform. The same laser epitaxial stack can be easily grown on the substrate of a silicon photonic chip to allow light coupling from QD laser cavities to the silicon WGs.