Characteristics of silicon strip sensor irradiated up to a proton fluence of 10^17 neq/cm2
Characteristics of silicon strip sensor irradiated up to a proton fluence of 10^17 neq/cm2
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质子注量达到 10^17 neq/cm2 的硅条传感器的特性
DOI：
10.1016/j.nima.2020.164507
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
et al.,
中科院分区：
文献类型：
--
作者：
K. Sato;et al.,
在高亮度升级的欧洲核子研究中心大型强子对撞机（HL-LHC）实验中，采用硅半导体探测器技术，对碰撞点周围的内部区域进行精确跟踪，其中穿越粒子通量达到1× 10 16 1- mev n eq∕cm2。在未来，强子对撞机将为罕见的物理搜索提供更高的亮度，探测器将表现出更好的辐射硬度。利用haamatsu Photonics公司制造的用于HL-LHC的n+ in-p微带探测器，在70 MeV的质子照射下达到10 - 17 n eq∕cm2，并对其特性的变化进行了评价，以评估硅探测器的性能和可能的改进设计，以备将来的实验使用。基于ATLAS内跟踪器条带传感器的表征方法进行表征；通过90sr β射线穿透测得的电荷集、条带间电容和铝带电阻、多晶硅偏置电阻、植入条带电阻和穿孔保护。
Silicon semiconductor detector technology has been adopted in experiments using the high-luminosity upgrade of the CERN Large Hadron Collider (HL-LHC), to perform precision tracking in the inner region surrounding the collision point, where the traversing particle fluence reaches 1× 1 0 16 1-MeV n eq∕ cm 2. In the future, hadron colliders should provide even higher luminosities for rare physics searches, with detectors that exhibit even better radiation hardness. Fabricated by Hamamatsu Photonics, n+-in-p microstrip detectors developed for the HL-LHC were irradiated with 70 MeV protons up to a fluence of 1 0 17 n eq∕ cm 2, and the changes in the characteristics were evaluated to estimate the performance and possible improvements in the design of the silicon detector for future experiments. The characterization was conducted based on the methods developed for the characterization of the ATLAS Inner Tracker strip sensors; the charge collection measured with penetrating 90 Sr β-rays, the interstrip capacitance and aluminum strip resistance, the poly-silicon bias resistance, the implant strip resistance, and the punch-through protection.