Annealing behaviour of gamma-ray-induced electron traps in LEC n-InP
Annealing behaviour of gamma-ray-induced electron traps in LEC n-InP
复制标题
LEC n-InP 中伽马射线诱导电子陷阱的退火行为
DOI：
10.1049/el:19830415
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发表时间：
1983
影响因子：
1.1
通讯作者：
Y. Inuishi
中科院分区：
文献类型：
--
作者：
J. Koyama;J. Shirafuji;Y. Inuishi
用DLTS技术研究了非掺杂−中伽马射线诱导主导电子陷阱(EC InP 0.79 eV)的退火行为。等温退火实验表明，这是一个一级过程，激活能为0.98 eV，远小于室温辐照的n-GaAs的激活能。
The annealing behaviour of a gamma-ray-induced dominant electron trap (Ec − 0.79 eV) in LEC undoped n-InP is studied by means of the DLTS technique. The isothermal annealing experiment shows it is a first-order process with an activation energy of 0.98 eV; this value is much smaller than those found in room-temperature-irradiated n-GaAs.