Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition
Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition
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DOI：
10.1063/1.1590423
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发表时间：
2003-06
影响因子：
4
通讯作者：
Y. Ryu;T. S. Lee;H. White
中科院分区：
文献类型：
--
作者：
Y. Ryu;T. S. Lee;H. White
对掺砷氧化锌（ZnO：As）薄膜进行了表征。ZnO：As薄膜的霍尔效应和光致发光（PL）测量确定的p型特性。空穴浓度可以增加到1017-cm−3范围的中间。As受体的热结合能（EAth-b）为120±10 meV，由温度相关的霍尔效应测量得出。的PL光谱揭示了两个不同的受体水平（EAopt-b），分别位于115和164毫电子伏，以上的ZnO价带的最大值，也显示了激子的结合能作为受体（EAXb）是约12毫电子伏。比率EAXb/（EAth-b或EAopt-b）的值位于0.07至0.11的范围内。
As-doped ZnO (ZnO:As) films have been characterized. ZnO:As films show p-type characteristics determined by Hall-effect and photoluminescence (PL) measurements. The hole concentration can be increased up to the mid-1017-cm−3 range. The thermal binding energy of the As acceptor (EAth-b) is 120±10 meV, as derived from temperature-dependent Hall-effect measurements. The PL spectra reveal two different acceptor levels (EAopt-b), located at 115 and 164 meV, respectively, above the maximum of the ZnO valence band, and also show the binding energy of the exciton to the As-acceptor (EAXb) is about 12 meV. The values of the ratio EAXb/(EAth-b or EAopt-b) are located in the range from 0.07 to 0.11.