Improved conversion efficiency of Ag2S quantum dot-sensitized solar cells based on TiO2 nanotubes with a ZnO recombination barrier layer.

Improved conversion efficiency of Ag2S quantum dot-sensitized solar cells based on TiO2 nanotubes with a ZnO recombination barrier layer.
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DOI:
10.1186/1556-276x-6-462
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发表时间:
2011-07-21
影响因子:
--
通讯作者:
Cho SO
Cho SO
中科院分区:
材料科学3区
文献类型:
--
作者:
Chen C;Xie Y;Ali G;Yoo SH;Cho SO

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我们通过在普通的TiO2纳米管阵列电极上化学沉积ZnO复合阻挡层来提高Ag2S量子点(QD)敏化的TiO2纳米管阵列电极的转换效率。研究了所制备电极的光学性质、结构性质、组成分析和光电化学性质。结果表明,对于所制备的电极,随着Ag2S沉积周期的增加,光电流密度和转换效率增加。此外,与没有ZnO层的Ag2S QD敏化的TiO2纳米管阵列电极相比,由于在TiO2纳米管阵列和电解质之间形成有效的复合层,具有ZnO层的电极的转换效率显著增加。
We improve the conversion efficiency of Ag2S quantum dot (QD)-sensitized TiO2 nanotube-array electrodes by chemically depositing ZnO recombination barrier layer on plain TiO2 nanotube-array electrodes. The optical properties, structural properties, compositional analysis, and photoelectrochemistry properties of prepared electrodes have been investigated. It is found that for the prepared electrodes, with increasing the cycles of Ag2S deposition, the photocurrent density and the conversion efficiency increase. In addition, as compared to the Ag2S QD-sensitized TiO2 nanotube-array electrode without the ZnO layers, the conversion efficiency of the electrode with the ZnO layers increases significantly due to the formation of efficient recombination layer between the TiO2 nanotube array and electrolyte.