Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures
Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures
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DOI：
10.1109/jproc.2009.2035465
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发表时间：
2010-05
影响因子：
20.6
通讯作者：
D. Hofstetter;E. Baumann;F. Giorgetta;R. Théron;Hong Wu;W. Schaff;J. Dawlaty;P. George;L. Eastman;F. Rana;P. Kandaswamy;F. Guillot;E. Monroy
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文献类型：
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作者：
D. Hofstetter;E. Baumann;F. Giorgetta;R. Théron;Hong Wu;W. Schaff;J. Dawlaty;P. George;L. Eastman;F. Rana;P. Kandaswamy;F. Guillot;E. Monroy
我们报告了基于 AlN/GaN 材料系统中子带间跃迁的光电器件的物理、外延生长、制造和表征。虽然在 1999 年只能展示光吸收实验的结果，但最近已经展示了工作频率超过 10 GHz 的光电探测器和调制器以及光泵浦光发射器。这就是对此类设备最重要属性进行全面报告的原因。除了一些基本的理论考虑之外，我们还将重点关注调制器、开关、光电探测器和光发射器的制造和表征。在本文的最后，将对这一新兴领域的未来趋势和发展进行展望。
We report on the physics, epitaxial growth, fabrication, and characterization of optoelectronic devices based on intersubband transitions in the AlN/GaN material system. While in 1999, only results of optical absorption experiments could be shown, photodetectors and modulators with operation frequencies beyond 10 GHz as well as optically pumped light emitters have been demonstrated recently. This is the reason for a comprehensive report on the most important properties of such devices. Beside some basic theoretical considerations, we will concentrate on the fabrication and characterization of modulators, switches, photodetectors, and light emitters. At the end of this paper, an outlook to future trends and developments in this emerging field will be given.