2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects
2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects
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高温下硅的 2 MeV 电子辐照：对铂扩散和电活性缺陷产生的影响
DOI：
10.1063/1.369773
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发表时间：
1999
影响因子：
3.2
通讯作者：
C. Blanchard
中科院分区：
文献类型：
--
作者：
D. Schmidt;B. Svensson;J. Lindström;S. Godey;E. Ntsoenzok;J. Barbot;C. Blanchard
在2 MeV电子辐照过程中，使用1×1017 e− cm−2的剂量，在300-800 °C下将铂扩散到n型外延硅样品中30 min。 此后，通过电容-电压测量和深能级瞬态光谱对样品进行了表征。可以分析辐照温度为500、600和700 °C的样品，而其他样品的补偿过高。大多数观察到的深层次的特点是使用Arkidius方法。他们可能的身份进行了讨论。置换型铂的深能级首先出现在600 °C辐照的样品中，并且在更高的温度下是主要的缺陷能级。 我们观察到，在离样品表面选定的距离（17 μm）处，在700 °C下辐照后，电活性铂的浓度比普通扩散样品高1000倍。 考虑到铂扩散到预辐照样品中的实验，所观察到的行为是属性。
Platinum has been diffused at 300–800 °C for 30 min into n-type epitaxial silicon samples during 2 MeV electron irradiation using a dose of 1×1017 e− cm−2. Thereafter the samples were characterized by capacitance–voltage measurements and deep level transient spectroscopy. The samples with irradiation temperatures of 500, 600, and 700 °C could be analyzed, while the compensation in the others was too high. Most of the observed deep levels were characterized using the Arrhenius method. Their possible identities are discussed. The deep level of substitutional platinum first appears in the sample irradiated at 600 °C and is the dominant defect level at even higher temperatures. We observe that at a chosen distance from the sample surface (17 μm), the concentration of electrically active platinum after an irradiation at 700 °C is a factor of 1000 higher than in an ordinarily diffused sample. Taking into account experiments where platinum was diffused into pre-irradiated samples, the observed behavior is attrib...