Nucleation of Crystalline Ta2 O 5 During Field Crystallization
Nucleation of Crystalline Ta2 O 5 During Field Crystallization
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场结晶过程中晶体 Ta2 O 5 的成核
DOI：
10.1149/1.2428649
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发表时间：
1957
影响因子：
3.9
通讯作者：
D. Vermilyea
中科院分区：
文献类型：
--
作者：
D. Vermilyea
非晶 TarO5 薄膜场结晶过程中的成核发生在金属表面的异质性处。施加场和出现第一个晶体之间的时间对应于晶体在成核位点之一上生长到临界尺寸。在恒温条件下，潜伏期的对数随着电场的减小而线性增加。讨论了在这些条件下晶体成核的可能机制。只要膜中存在强电场，非晶阳极 TarO5 膜的结晶就可以在室温附近的温度下完成 (1)。该过程产生由楔形多晶片段组成的大致圆形晶体区域，每个区域都被取代的非晶薄膜的卷绕圆柱体包围。最近对氧化铝阳极膜 (2)、氧化铪阳极膜 (3)、铜腐蚀膜 (4) 和在氧气中形成的氧化铬 (5) 进行了类似外观的结晶区域的观察。此外，这里还观察到，如果加热至 590℃约 20 分钟，阳极 TarO5 膜会以类似的方式结晶。
Nucleation during field crystallization of amorphous TarO5 films occurs at heterogeneities on the metal surface. The time between the application of the field and the appearance of the first crystals corresponds to growth to critical size of a crystal on one of the nucleation sites. The logarithm of the incubation period increases linearly with decreasing electric field at constant temperature. Possible mechanisms for the nucleation of crystals under these conditions are discussed.Crystallization of amorphous anodic TarO5 films may be accomplished at temperatures in the vicinity of room temperature provided that a strong electric field is present in the film (1). This process results in roughly circular crystalline areas consisting of wedge-shaped polycrystalline segments, each area being surrounded by coiled cylinders of the replaced amorphous film. Recent observations of crystalline regions of similar appearance have been made on aluminum oxide anodic films (2), on hafnium oxide anodic films (3), on corrosion films on copper (4), and on chromium oxide (5) formed in oxygen. In addition, it has been observed here that an anodic TarO5 film crystallizes in a similar manner if heated to 590~ for about 20 min.