Investigation of proximity effects in electron microscopy and lithography
Investigation of proximity effects in electron microscopy and lithography
复制标题
DOI：
10.1063/1.3681593
复制
发表时间：
2012-01-30
影响因子：
4
通讯作者：
Marbach, H.
中科院分区：
文献类型：
--
作者：
Walz, M. -M.;Vollnhals, F.;Marbach, H.
使用聚焦电子束的光刻和显微技术的一个基本挑战是所谓的邻近效应，这是由于样品中意外的电子发射和散射造成的。在此，我们应用了一种方法，该方法允许通过铁沉积在覆盖有薄的自然氧化层的SiN衬底上可视化电子诱导的表面修饰。传统观点认为，通过使用薄膜，可以有效地减少邻近效应。我们证明，与预期相反，由于充电效应，在200 nm的SiN膜上确实可以比在相应的主体衬底上更大。(C)2012年美国物理研究所。[DOI：10.1063/1.3681593]
A fundamental challenge in lithographic and microscopic techniques employing focused electron beams are so-called proximity effects due to unintended electron emission and scattering in the sample. Herein, we apply a method that allows for visualizing electron induced surface modifications on a SiN substrate covered with a thin native oxide layer by means of iron deposits. Conventional wisdom holds that by using thin membranes proximity effects can be effectively reduced. We demonstrate that, contrary to the expectation, these can be indeed larger on a 200 nm SiN-membrane than on the respective bulk substrate due to charging effects. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681593]