Double-sided structured mask for sub-micron resolution proximity i-line mask-aligner lithography.
Double-sided structured mask for sub-micron resolution proximity i-line mask-aligner lithography.
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用于亚微米分辨率邻近 i 线掩模对准光刻的双面结构化掩模。
DOI：
10.1364/oe.23.016628
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发表时间：
2015
期刊：
影响因子：
3.8
通讯作者：
U. Zeitner
中科院分区：
文献类型：
--
作者：
Y. Bourgin;T. Siefke;T. Käsebier;P. Genevée;A. Szeghalmi;E. Kley;U. Zeitner
衍射掩模对准器光刻允许印刷结构具有亚微米分辨率通过使用非接触模式。为了这样的目的，掩模通常被设计成与单色线偏振光一起工作，这是通过在光束路径中放置光谱滤光片和偏振器来获得的。本文提出了一种掩模设计，该掩模的顶部包含一个线栅偏振器（WGP），底部包含一个衍射元件，使用经典的掩模对准器在接近曝光模式下打印350nm周期光栅。只有在掩模的顶部使用WGP，才能使非偏振入射光束在局部线性极化。这种配置打开了在单个掩模上使用不同线性偏振方向的可能性，并允许在一次曝光中打印具有不同方向的高分辨率结构。
Diffractive mask-aligner lithography allows printing structures that have a sub-micrometer resolution by using non-contact mode. For such a purpose, masks are often designed to operate with monochromatic linearly polarized light, which is obtained by placing a spectral filter and a polarizer in the beam path. We propose here a mask design that includes a wire-grid polarizer (WGP) on the top side of a photo-mask and a diffractive element on the bottom one to print a 350 nm period grating by using a classical mask-aligner in proximity exposure mode. Linearly polarizing locally an unpolarized incident beam is only possible by using a WGP on the top side of the mask. This configuration opens the possibility to use different linear polarization orientation on a single mask and allows to print high resolution structures with different orientation within one exposure.