New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching
New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching
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基于各向同性半导体（硒化锌和砷化镓）的新型中红外光源，采用全内反射准相位匹配
DOI：
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发表时间：
2003
期刊：
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通讯作者：
P. Lemasson
中科院分区：
文献类型：
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作者：
R. Haidar;P. Kupecek;E. Rosencher;R. Triboulet;P. Lemasson
法国航空航天局参与了利用高非线性效率半导体（ZnSe、GaAs或InP）等新材料实现紧凑型固态相干光源的工作，如光学参量振荡器（OPO）。然而，由于这些材料是光学各向同性的，它们需要新的相位匹配技术。本文报道了利用全内反射在各向同性半导体中产生准相位匹配差频。我们利用大的菲涅耳双折射在信号和闲频输出的OPO之间的反射。大的可调谐性（8 - 13 μm）。理论预期与实验结果之间的协议是极好的。
The French aerospace agency is involved in the realization of compact solid-state coherent sources, such as optical parametric oscillators (OPO), using new materials, such as highly non-linearly efficient semiconductors (ZnSe, GaAs or InP). However, since these materials are optically isotropic, they require new phase-matching techniques. We report the quasi-phase matched difference frequency generation in isotropic semiconductors using total internal reflection. We made use of large Fresnel birefringence at reflection between the signal and idler wave outputs of an OPO. Large tunability (between 8 and 13 μm) is demonstrated. Agreement between theoretical expectation and experimental results is excellent.