Formation of AlB2- and ThSi2-type structures in Ce(CuxGey)2 system
Formation of AlB2- and ThSi2-type structures in Ce(CuxGey)2 system
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DOI：
10.1016/s0921-4526(01)01299-6
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发表时间：
2002-03
影响因子：
2.8
通讯作者：
G. Nakamoto;Taichi Hagiuda;M. Kurisu
中科院分区：
文献类型：
--
作者：
G. Nakamoto;Taichi Hagiuda;M. Kurisu
我们研究了Ce (Cu x Ge y) 2 化合物的晶体结构。随着Cu:Ge比的减小，体系的晶体结构从AlB 2 型六方结构转变为ThSi 2 型四方结构。结果表明，两种结构的单相仅在 x+ y= 0.95 的狭窄区域内获得。两种结构都具有随机分布的非磁性原子。
We have examined the crystal structure of Ce (Cu x Ge y) 2 compounds. The crystal structure of the system changes from the AlB 2-type hexagonal structure to the ThSi 2-type tetragonal structure with decreasing Cu: Ge ratio. It is revealed that the single phases of both the structures are only obtained in the narrow region of x+ y= 0.95. Both structures have a random distribution of non-magnetic atoms.