Resistance switching properties in Pt/SrTiO3:Nb Schottky junctions studied by admittance spectroscopy
Resistance switching properties in Pt/SrTiO3:Nb Schottky junctions studied by admittance spectroscopy
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DOI：
10.1016/j.mseb.2010.03.025
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发表时间：
2010-10
影响因子：
3.6
通讯作者：
Jianyong Li;N. Ohashi;H. Okushi;T. Nakagawa;I. Sakaguchi;H. Haneda;R. Matsuoka
中科院分区：
文献类型：
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作者：
Jianyong Li;N. Ohashi;H. Okushi;T. Nakagawa;I. Sakaguchi;H. Haneda;R. Matsuoka
我们已经研究了Pt/Nb掺杂SrTiO 3（STO：Nb）肖特基结的电阻开关行为，这是使用STO：Nb单晶制作的抛光表面，热处理表面，和新鲜解理表面。最大和最小的IV曲线的峰值分别出现在解理和热处理的样品表面。IV曲线的温度依赖性表明，在反向偏置模式下的漏电流急剧增加，随着温度的降低，所有样品。冷却也增强了滞后的幅度。结导纳的频率依赖性表明，Pt/STO：Nb结的基本结构可以用耗尽层（电容）和漏电流通路的并联来描述，而且漏电流通路似乎是一个简单的导电通路，电导没有明显的频率依赖性。
We have investigated the resistance switching behavior of Pt/Nb-doped SrTiO3 (STO: Nb) Schottky junctions, which were fabricated using STO: Nb single crystals with an as-polished surface, a thermally treated surface, and a freshly cleaved surface. The largest and smallest IV curve hystereses were found in the samples with the cleaved and thermally treated surfaces, respectively. The IV curves' temperature dependence showed a steep increase of leakage current in reverse bias mode with decreasing temperature for all samples. Also cooling enhanced the magnitude of the hysteresis. The frequency dependence of the junction admittance indicated that the fundamental structure of the Pt/STO: Nb junction can be described by a parallel connection of a depletion layer (capacitance) and a leakage path. Furthermore, the leakage path seemed to be a simple conduction path without any obvious frequency dependency in conductance.