FORMATION OF POLY-PERI-NAPHTHALENE THIN-FILM BY CHEMICAL-VAPOR-DEPOSITION
FORMATION OF POLY-PERI-NAPHTHALENE THIN-FILM BY CHEMICAL-VAPOR-DEPOSITION
复制标题
DOI：
10.1016/0379-6779(94)90147-3
复制
发表时间：
1994-12-01
期刊：
影响因子：
4.4
通讯作者：
YOSHIMURA, S
中科院分区：
文献类型：
--
作者：
KAMO, H;YUDASAKA, M;YOSHIMURA, S
以3,4,9,10-苝四羧酸二酐（PTCDA）为原料，采用化学气相沉积（CVD）法制备了聚环萘（PPN）薄膜。当PTCDA和Fe衬底温度分别保持在520℃和380℃时，得到了PPN薄膜。红外吸收光谱和拉曼散射光谱证实了其化学结构。所得PPN薄膜的电导率为5.7 X 10(-4) S/cm，电导率随温度变化计算的活化能为0.18 eV。
Thin films of poly-peri-naphthalene (PPN) were made by chemical Vapor deposition (CVD) by using 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) as a source material. The PPN films were obtained when temperatures of PTCDA and Fe substrates were kept at 520 and 380 degrees C, respectively. The chemical structure was confirmed by infrared absorption and Raman scattering spectra. The electrical conductivity of the obtained PPN film was 5.7 X 10(-4) S/cm and the activation energy calculated from the temperature dependence of the electrical conductivity was 0.18 eV.